Inter-ribbon tunneling in graphene: An atomistic Bardeen approach
نویسندگان
چکیده
منابع مشابه
Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)
By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...
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Graphene subject to a spatially uniform, circularly polarized electric field supports a Floquet spectrum with properties akin to those of a topological insulator. The transport properties of this system, however, are complicated by the nonequilibrium occupations of the Floquet states. We address this by considering transport in a two-terminal ribbon geometry for which the leads have well-define...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2016
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4953148